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The enhanced polarization relaxation and excellent high-temperature dielectric properties of N-doped SiC (2014)

American Institute of Physics (AIP)

In: Applied Physics Letters

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Publication Date: 2014-02-05

Description: The dielectric properties and microwave attenuation performance of N-doped SiC have been evaluated in 8.2–12.4 GHz in the temperature range of 293–673 K. The N doping dramatically improves the microwave absorption capability of SiC. The minimum reflection loss of N-doped SiC is enhanced to nearly −30 dB with the effective absorption bandwidth [ RL (dB) ≤ −10 dB] up to 3 GHz at 673 K. The excellent high-temperature dielectric properties are attributed to multi-relaxations, originated from the polarization relaxations of dipoles induced by the N doping and vacancy defects.

Print ISSN: 0003-6951

Electronic ISSN: 1077-3118

Topics: Physics

Published by American Institute of Physics (AIP)

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