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Probing the local environment of two-dimensional ordered vacancy structures in Ga2SeTe2 via aberration-corrected electron microscopy (2014)

American Institute of Physics (AIP)

In: Applied Physics Letters

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Publication Date: 2014-02-04

Description: There has been considerable interest in chalcogenide alloys with high concentrations of native vacancies that lead to properties desirable for thermoelectric and phase-change materials. Recently, vacancy ordering has been identified as the mechanism for metal-insulator transitions observed in GeSb 2 Te 4 and an unexpectedly low thermal conductivity in Ga 2 Te 3 . Here, we report the direct observation of vacancy ordering in Ga 2 SeTe 2 utilizing aberration-corrected electron microscopy. Images reveal a cation-anion dumbbell inversion associated with the accommodation of vacancy ordering across the entire crystal. The result is a striking example of the interplay between native defects and local structure.

Print ISSN: 0003-6951

Electronic ISSN: 1077-3118

Topics: Physics

Published by American Institute of Physics (AIP)

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