Publication Date:
2013-10-18
Description:
Article To reach terabit density in random access memory devices, the select switching and storage components need to be improved. Here, the authors fabricate a fully stackable switching device based on chalcogenides, which reaches an exceptional performance following reactive nitrogen and nitrogen plasma treatments. Nature Communications doi: 10.1038/ncomms3629 Authors: Myoung-Jae Lee, Dongsoo Lee, Seong-Ho Cho, Ji-Hyun Hur, Sang-Moon Lee, David H Seo, Dong-Sik Kim, Moon-Seung Yang, Sunghun Lee, Euichul Hwang, Mohammad Rakib Uddin, Hojung Kim, U-In Chung, Youngsoo Park, In-Kyeong Yoo
Electronic ISSN:
2041-1723
Topics:
Biology
,
Chemistry and Pharmacology
,
Natural Sciences in General
,
Physics