Publication Date:
2018
Description:
〈p〉Coupling spin qubits to electric fields is attractive to simplify qubit manipulation and couple qubits over long distances. Electron spins in silicon offer long lifetimes, but their weak spin-orbit interaction makes electrical coupling challenging. Hole spins bound to acceptor dopants, spin-orbit–coupled 〈i〉J〈/i〉 = 3/2 systems similar to Si vacancies in SiC and single Co dopants, are an electrically active spin system in silicon. However, 〈i〉J〈/i〉 = 3/2 systems are much less studied than 〈i〉S〈/i〉 = 1/2 electrons, and spin readout has not yet been demonstrated for acceptors in silicon. Here, we study acceptor hole spin dynamics by dispersive readout of single-hole tunneling between two coupled acceptors in a nanowire transistor. We identify 〈i〉m〈/i〉〈sub〉〈i〉J〈/i〉〈/sub〉 = ±1/2 and 〈i〉m〈/i〉〈sub〉〈i〉J〈/i〉〈/sub〉 = ±3/2 levels, and we use a magnetic field to overcome the initial heavy-light hole splitting and to tune the 〈i〉J〈/i〉 = 3/2 energy spectrum. We find regimes of spin-like (+3/2 to –3/2) and charge-like (±1/2 to ±3/2) relaxations, separated by a regime of enhanced relaxation induced by mixing of light and heavy holes. The demonstrated control over the energy level ordering and hybridization are new tools in the 〈i〉J〈/i〉 = 3/2 system that are crucial to optimize single-atom spin lifetime and electrical coupling.〈/p〉
Electronic ISSN:
2375-2548
Topics:
Natural Sciences in General
