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    Method of making a high conductance ohmic junction for monolithic semiconductor devices (1988)
    In:  CASI
    Details
    Publication Date: 2019-07-12
    Description: In order to increase the efficiency of solar cells, a monolithic stacked device is constructed comprising a plurality of solar sub-cells adjusted for different bands of radiation. The interconnection between these sub-cells has been a significant technical problem. The invention provides an interconnection which is a thin layer of high ohmic conductance material formed between the sub-cells. Such a layer tends to form beads which serve as a shorting interconnect while passing a large fraction of the radiation to the lower sub-cells and permitting lattice-matching between the sub-cells to be preserved.
    Keywords: Solid-State Physics
    Format: application/pdf
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