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An anti-reflection coating for use with PMMA at 193 nm (1992)

Yen, Anthony ; Smith, Henry I. ; Schattenburg, M. L. ; [et al.]

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Publication Date: 2019-07-12

Description: An antireflection coating (ARC) for use with poly(methyl methacrylate) (PMMA) resist for ArF excimer laser lithography (193 nm) was formulated. It consists of PMMA and a bis-azide, 4.4-prime-diazidodiphenyl sulfone (DDS) which crosslinks the film after deep UV (260 nm) irradiation and subsequent annealing. The reacted DDS then serves as the absorber for the 193 nm radiation and also prevents mixing of the ARC and PMMA during PMMA spin-coating and development. The effectiveness of the ARC was demonstrated by exposing, in PMMA, using achromatic holographic lithography, gratings of 100 nm period (about 50 nm linewidth) that are almost entirely free of an orthogonal standing wave.

Keywords: OPTICS

Type: Electrochemical Society, Journal (ISSN 0013-4651); 139; 616-619

Format: text

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