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  • 1
    Publication Date: 2019-07-13
    Description: The use of the column V-trialkyls trimethylarsenic (TMAs) and trimethylantimony (TMSb) for the organometallic vapor phase epitaxy (OM-VPE) of III-V compound semiconductors is reviewed. A general discussion of the interaction chemistry of common Group III and Group V reactants is presented. The practical application of TMSb and TMAs for OM-VPE is demonstrated using the growth of GaSb, GaAs(1-y)Sb(y), Al(x)Ga(1-x)Sb, and Ga(1-x)In(x)As as examples.
    Keywords: INORGANIC AND PHYSICAL CHEMISTRY
    Type: Semiconductor growth technology;; January 26-27, 1982; Los Angeles, CA
    Format: text
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