ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This work aims to obtain fine surface of silicon wafer during precision and ultra precisionmachining, and presents a new method called semibonded abrasive machining. A semibondedabrasive grinding plate is used in the semibonded abrasive machining. Abrasive particle of 1000#Green SiC and bond named SSB are adopted in the manufacture of the plate. Four plates withdifferent concentration of bond which are 1.5%, 2.5%, 3.5%, 4.5% respectively are made. The paperstudies the effect of concentration of bond, the control parameters which include the lapping time, theload, and the rotating velocity of the plate on the surface roughness. Experimental results indicateeach plate with different concentration of bond can obtain fine surface roughness. When the load orthe rotating velocity increases, there is little effect on the surface roughness, but the materialremoval rate increases correspondingly. The initial roughness of the silicon wafer surface lappingby the plate could be improved from Ra 0.2μm to Ra 0.02μm in 9 min
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/41/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.53-54.173.pdf
