Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 140 (Oct. 2008), p. 17-26
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Recent progress in the growth of nitride based semiconductor structures made by plasmaassisted MBE (PAMBE) is reported. The technology is ammonia free and the nitrogen for growth isactivated by an RF plasma source from nitrogen molecules. A new approach for the growth ofnitrides by PAMBE at temperature range 500 - 600°C is described. The key for this technique is touse a thin, dynamically stable metal (In or Ga) layer on the (0001) GaN surface, which enables ahigh quality 2D step-flow growth mode to be achieved at temperatures much lower than thosedetermined by thermodynamic considerations. A new perspective for PAMBE in optoelectronicshas been opened recently by a demonstration of continuous wave operation of InGaN blue–violetlaser diodes. These laser diodes were fabricated on bulk GaN substrates with a low threadingdislocation density
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.140.17.pdf
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