ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
SiC films were prepared by HFCVD technique on (111) Si substrate. The composition and thestructure of the films were investigated using EDX, XRD and transient fluorescence. Results indicated thefilms deposited were nanocrystalline and the calculation of the grain size gave a further confirmation. PLmeasurement of the present films showed that there existed a strong ultraviolet emission at roomtemperature
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.368-372.319.pdf