ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
4H-SiC p-type MOS capacitors fabricated by wet oxidation of SiC preamorphizedby nitrogen ion (N+) implantation have been investigated. The oxidation rate of the SiC layerpreamorphized by high-dose N+ was much larger than that of crystalline SiC, allowing usto reduce the fabrication time of SiC MOS devices. We found that the presence of the surfaceamorphous SiC layer before the oxidation process did not influence the interface state density inMOS capacitors. Moreover, the shift of the flat-band voltage is not correlated to the amount ofnitrogen in the oxide. On the contrary the density of interface states near the valence band edgeincreased according with the high concentration of the implanted N at the oxide–SiC interface,as in the case of dry oxidation reported by Ciobanu et al. The generation of positive chargesdue to the nitrogen embedded inside the oxide layer was smaller compared with dry oxidation.We discuss the difference between wet and dry oxidation for MOS capacitors fabricated withN+ implantation
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.651.pdf