ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
A sputtering source utilizing both microwave and dc planar magnetron plasmas is described. Microwave power is introduced into the plasma by a coaxial-type cavity. The magnetron target is placed on the open end of the inner conductor. This source produces a plasma which is well matched, stable, and can operate continuously at gas pressures from 3×10−4 to 2×10−2 Torr. Plasmas with densities greater than 1011 cm−3 are obtained at gas pressure of 10−4 Torr using a microwave power of 100 W. The deposition rate of Cu is more than 0.13 μm/min for an argon gas pressure of 3×10−4 Torr, and microwave and dc powers of 100 W, respectively. This new source has many potential uses such as sputtering, etching, and chemical vapor deposition.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1142475
