Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
57 (1985), S. 1176-1181
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Rotational weak-field magnetoresistance (WFMR) measurements were performed between 4.2 and 300 K on thin films of (111)-oriented n-type PbTe deposited on BaF2 and doped with approximately 0.1 and 0.25 at. % In. Due to substrate-induced strain, the 0.1% In-doped sample showed a significant departure from cubic symmetry at 4.2 K corresponding to a transfer of carriers into the valley along the strain axis in the PbTe multivalley conduction band. This in-plane stretching of the film was found to persist even up to 300 K. The 0.25% In-doped film was strained to a lesser extent at 4.2 K and by room temperature had changed from a tensile strain to a compressive strain. Such a change is attributed to the opposing effects of film-substrate lattice mismatch and the difference in their thermal expansion coefficients. The WFMR for the in-plane configuration of both films displayed an unusual skewness below 300 K which is normally not allowed in (111)-oriented films, whether cubic or trigonally distorted.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.334512
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