ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Current effects in heavy arsenic implants into silicon protected by a SiO2 layer were studied by Rutherford backscattering, spectrometry, differential sheet resistivity and Hall mobility measurements, Auger electron spectrometry, and transmission electron microscopy. It was found that oxygen atoms recoiled into silicon by the impinging arsenic ions affect the solid-phase epitaxial regrowth during the low-temperature ((approximately-equal-to)500 °C) postimplant anneal. A complete stopping in the regrowth was noticed in samples implanted at 1016 cm−2 at low current and annealed at 500 °C. These results show that the procedure suggested to obtain high-quality implanted layers, i.e., (1) formation of an amorphous layer with implants at low temperature and (2) solid-phase epitaxy at about 500 °C, is not suitable for implants through a SiO2 layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.335722
