Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
61 (1987), S. 431-433
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Silicon nitride films have been prepared by excimer laser photolysis of ammonia/silane or ammonia/disilane mixtures at temperatures in the range 225–625 °C in a hot-walled low-pressure reactor. The highest-quality films, deposited at 225 °C, have high breakdown-field strength, Ebd=8.8 Mv cm−1, low midgap interface-state-trap densities, Nit=1.7×1011 eV−1 cm−2, and a dielectric constant of ε=4.8.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.338843
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