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    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5851-5853 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a new process, a large grain polycrystalline silicon layer was grown directly from molten Si on a single-crystal silicon wafer at a rate 100 times faster than the conventional chemical vapor deposition process. A polycrystalline silicon layer was also produced on a single-crystal silicon wafer, which had an oxide layer and etched V grooves, through use of an additional ultrasonic wave effect in this process. A layer thickness of 100–600 μm and a grain size of 10 μm–3 mm were controllably obtained. After the growth of the polycrystalline layer, dislocation densities of 4×105 cm−2 for the single-crystal silicon substrate, and 2×106 cm−2 for the polycrystalline layer were obtained. Some devices were fabricated from the products of this new process, and the characteristics of these devices were investigated.
    Type of Medium: Electronic Resource
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