Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
67 (1990), S. 2359-2363
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The fabrication of n+ and p+ silicon thin film by using a combination of "spin-on-glass'' and XeCl excimer-laser doping is described. The doping can be achieved by rapid dopant atom diffusion into molten silicon from a spin-coated film containing the dopant. This technology offers the advantages of process simplicity, low processing temperature, and ultrashallow high-concentration doping. The obtained sheet resistances (2 kΩ/(D'Alembertian) for n+ and 9 kΩ/(D'Alembertian) for p+) are acceptable for thin-film transistors (TFTs). The energy required for doping into a thin film was less than half of that for a silicon wafer. This is mainly due to the absorption rate difference between noncrystalline and crystalline silicon. This process appears extremely promising for TFT fabrication.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.345531
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