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Hot implantation of protons into GaAs: Transmission electron microscopy (1993)

Schober, T. ; Friedrich, J.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 74 (1993), S. 4371-4374

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Implantation of hydrogen at 600 °C into GaAs at 8 keV and at high doses resulted in the formation of a two-layer structure. The topmost layer roughly extended in depth to the range of the protons and exhibited a high concentration of loops, hydrogen bubbles, decorated dislocations, and faults. Occasional microsplits on {110} were observed. The deeper layer contained pressurized hydrogen platelets on {111}. These results are critically compared with previous results obtained with cold implanted and subsequently annealed GaAs. The present observations are also discussed in relation to the theoretical treatment by d'Olieslaeger [J. Mater. Sci. 23, 2697 (1988)]. Estimates of the importance of arsine production are also presented.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.354404

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