Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
75 (1994), S. 8231-8233
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The sheet resistances of ZnSe epitaxial layers etched by reactive ion etching (RIE) with use of a gas mixture of ethane and hydrogen were measured. The results showed that a high resistivity region was introduced by RIE. Characterization was done by transforming the measured resistances to the electrically active thickness estimated from the resistivity of as-grown ZnSe layers. The estimated electrically active thicknesses were smaller than the thickness of ZnSe epitaxial layers remaining after RIE, for both p- and n-ZnSe. The influence of heat treatment and current injection on the high resistivity regions differed between p- and n-ZnSe.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.356530
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