Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
75 (1994), S. 4510-4514
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The lattice relaxation at the GaAs1−xPx/GaAs interface is observed using thickness fringe images in transmission electron microscopy. The bending of the equal thickness fringes observed near the interface is explained, assuming that crystal planes are inclined near the interface and that the inclination has a maximum at the interface. The magnitudes of inclination and the thickness of the strained region are estimated for various phosphorous composition and the GaAsP thickness. The lattice relaxation mechanisms for GaAsP on GaAs is described. It is indicated from the thickness fringe observation that the lattice relaxation occurs gradually beyond the critical thickness.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.355942
|
Location |
Call Number |
Expected |
Availability |