Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 5054-5062
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have experimentally determined the internal temperature rise caused by electrical breakdown in a silicon avalanche photodiode by observing changes in the diode's optical properties. The spatial profile and temporal dependence of the temperature rise are both measured as a function of photodiode voltage. The results are consistent with a thermo-optic theoretical model, which assumes a scaling of the width of the breakdown filament that increases with the magnitude and duration of the steady-state breakdown current. The radius of the optical modulation was experimentally observed to range from about 1.5 to 3 μm. A single free parameter is used to obtain consistency between theory and experiment: the breakdown filament's full width at half maximum is assumed to equal 1.28 μm for an overvoltage of 10 V and a delay of 96 ns, for the diode studied. Modulation of the read beam was observed at a level as low as 10±6 absorbed photons per write pulse, demonstrating near-photon-counting response.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357217
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