Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
80 (1996), S. 5006-5013
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Radiation damage induced by 2 MeV alpha particles in polycrystalline diamond films has been studied as a function of the irradiation dose D (1012≤D≤1017 cm−2). The films were characterized using Raman/photoluminescence spectroscopy and I(V,T) measurements. The results can be summarized as follows. In undoped samples the H3 luminescent center (N–V–N) is observed for D≥1014 cm−2. The Raman diamond peak is broadened and shifted to lower frequencies for D(approximately-greater-than)1015 cm−2. No new graphitic component is detected after irradiation. On the contrary graphitic sp2 defects are annealed by irradiation. For D=3×1016 cm−2 new Raman defect peaks are detected at 1496 and 1635 cm−1. I(V,T) characteristics remain unaffected for D≤1016 cm−2. An increase in the conductivity is observed for D=3×1016 cm−2. At this dose we observe an activation energy of 0.4 eV and thermally stimulated currents related to defect levels at about 0.3 eV. A boron-doped sample (100 Ω cm) has been irradiated at 1017 cm−2 for comparison. After irradiation the conductivity of this sample is reduced and the activation energy of the conductivity is also reduced. Less damage is detected by Raman spectroscopy in the B-doped material. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363545
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