Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
81 (1997), S. 2566-2569
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have studied the lattice sites of ion-implanted radioactive 33P in natural IIa diamond using the emission channeling technique. 33P ions were implanted at room temperature with 30 keV and a rather low dose of 1011 cm−2 and the implanted samples were annealed in vacuum to 1200 °C. From the channeling effects of the emitted β− particles measured for all principal axial directions we obtain a fraction of 70±10% of substitutional P, a vanishing fraction on tetrahedral interstitial sites and a 30% random fraction. Possible displacements of the P atoms from ideal substitutional sites must be below 0.2 Å. This demonstrates that P is a substitutional impurity in diamond and efficient substitutional P doping of diamond can be accomplished by a conventional implantation and annealing procedure if low implantation doses are chosen. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363919
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