Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
83 (1998), S. 4106-4110
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The growth of a displacement field in single crystal silicon resulting from high dose hydrogen implantation and subsequent heat treatments has been investigated by MeV 4He+ Rutherford backscattering in channeling conditions, double crystal x-ray diffraction, and transmission electron microscopy. The results obtained in samples annealed for various times in the temperature range 220–350 °C have been explained in terms of a kinetic model which assumes the formation of clusters of hydrogen molecules. The growth of the displacement field is thermally activated with an activation energy of 0.50±0.05 eV, suggesting that the limiting process could be the release of hydrogen atoms bounded to defects created by ion implantation. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.367165
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