ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Direct integration of the Landau–Lifshitz–Gilbert equation in a three-dimensional rectangular lattice shows that fabrication asymmetry of tapered ends affects the magnetic switching behavior of the magnetic layers of a pseudospin valve (PSV) memory cell in word disturb condition. When a 10 nm asymmetry is introduced with the longer sides of the tapers on the same side of the PSV memory cell, a "360°" wall in the storage layer is formed when a 40 Oe uniform word disturb field is applied opposite to the magnetization direction in the storage layer. The initial magnetization state is recovered when the field is turned off. When the longer sides of the tapers are on opposite sides of the cell, complete magnetization reversal occurs in the storage layer. The sense layer and the storage layer relax to an antiparallel configuration magnetization that is opposite to the initial configuration in the memory cell when the field is turned off. The information is lost. Successful operation of the memory depends upon a fabrication accuracy that is better than 10 nm. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.370218
