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Light emitting porous silicon diode based on a silicon/porous silicon heterojunction (1999)

Pavesi, L. ; Chierchia, R.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 6474-6482

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A new structure is proposed to improve the external quantum efficiency of porous silicon (PS) light emitting diodes (LED). It is based on a heterojunction between n-type doped silicon and PS. The heterojunction is formed due to the doping selectivity of the etching process used to form PS. The improvement of the proposed LED structure with respect to usual metal/PS LED is demonstrated. This is thought to be due to a different injection mechanism for which carriers are injected directly into conduction band states. Anodic oxidation experiments show further improvements in the LED efficiency.© 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.371711

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