Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
87 (2000), S. 5648-5650
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The contribution of a magnetic domain wall to electric resistivity was measured using NiFe wires (width: 1 μm) partially covered with hard magnetic pads (CoSm). When the wire is covered with N pinning pads, 2N domain walls can be produced in the wire by reversing the magnetization only at the uncovered parts. The resistance for the magnetically saturated state (no domain wall structure) and that for the magnetic structure with 2N domain walls were compared at zero applied field. It was found that the resistance is smaller when magnetic domain walls exist, and that the domain wall resistance is almost temperature independent. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.372477
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