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Si3N4/SiC interface structure in SiC-nanocrystal-embedded α-Si3N4 nanorods (2002)

Gao, Y. H. ; Bando, Y. ; Kurashima, K. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 91 (2002), S. 1515-1519

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Si3N4/SiC interface structure in SiC-nanocrystal-embedded α-Si3N4 nanorods was studied by high-resolution transmission electron microscopy. The SiC-nanocrystal-embedded α-Si3N4 nanorods were synthesized by the method of carbothermal reduction of SiO in pure N2 atmosphere, while the SiC nanocrystals were produced from a substitution of SiC for Si3N4. Between SiC and Si3N4, there are three kinds of plane configurations and a set of orientation relationships, i.e., [11¯0]SiC//[0001]Si3N4 and nearly (111)SiC//(101¯0)Si3N4 with low-angle discrepancy of either 3° or 5°. The origin of the low-angle discrepancies was explained in terms of a reciprocal lattice theory for heteroepitaxial interfaces. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1428106

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