Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 262-264
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Photoluminescence measurements on annealed single-well Alx Ga1−x As-GaAs quantum well heterostructures demonstrate that layer disordering caused by native defects is strongly depth dependent. The depth-dependent layer disordering, as well as the corresponding depth-dependent net carrier concentration, is a consequence of the re-equilibration of the V−Ga vacancy and the As+Ga antisite native defect concentrations via the crystal surface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100984
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