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Epitaxial explosive crystallization of amorphous silicon (1989)

Polman, A. ; Mous, D. J. W. ; Stolk, P. A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 1097-1099

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: It is shown that amorphous silicon can be transformed to monocrystalline silicon via an explosive epitaxial crystallization process induced by pulsed laser irradiation. 370-nm-thick amorphous Si layers, buried beneath a 130-nm-thick crystalline surface layer, were irradiated with a 32 ns ruby laser pulse. Real-time reflectivity measurements indicate that internal melting can be initiated at the amorphous-crystalline interface, immediately followed by explosive crystallization of the buried amorphous Si layer. Channeling and cross-sectional transmission electron microscopy reveal that explosive crystallization proceeds epitaxially with formation of twins extending into the sample. The crystal growth velocity is determined to be 16.2±1.2 m/s, close to the fundamental limit for crystalline ordering at a liquid Si/Si(100) interface.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.101668

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