Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 2336-2338
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A dual-source reactive partially ionized beam deposition has been employed to deposit thin BaTiO3 films on the Si(100) substrate at room temperature. It is shown that with a small amount (3%) of Ti and oxygen ions in the beam one can dramatically control the electrical properties of the films. From the capacitance versus voltage (C-V) characteristics, the flatband voltage and the total interface charge density were measured to be 0.3 V and 1×1011/cm2, respectively. These ferroelectric compound oxide thin films with high-dielectric constant are potentially useful in high density memory applications.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104169
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