ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Data are presented showing that the native oxide that can be formed on high Al composition AlxGa1−xAs (x(approximately-greater-than)0.7) confining layers on AlyGa1−yAs-AlzGa1−zAs (y(approximately-greater-than)z) superlattices or quantum well heterostructures serves as an effective mask against impurity diffusion (Zn or Si), and thus against impurity-induced layer disordering. The high quality native oxide is produced by the conversion of high Al composition AlxGa1−xAs (x(approximately-greater-than)0.7) confining layers, which can be grown on a variety of heterostructures, via H2O vapor oxidation ((approximately-greater-than)400 °C) in an N2 carrier gas.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104460