ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A theoretical model that uses simple, analytic valence band equations to calculate the differential gain in strained layer InGaAs/GaAs quantum wells shows good agreement with experimental differential gain values obtained from multiple quantum well strained layer lasers. The differential gain in these devices is 7 times greater than in bulk, p-type doped InGaAsP lasers. Calculations including nonlinear damping effects indicate that modulation bandwidths exceeding 60 GHz should be achievable in strained layer quantum well lasers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105543