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Defects in amorphous silicon probed by subpicosecond photocarrier dynamics (1992)

Stolk, P. A. ; Calcagnile, L. ; Roorda, S. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 1688-1690

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The photocarrier dynamics in pure nonhydrogenated amorphous silicon (a-Si) have been studied with subpicosecond resolution using pump-probe reflectivity measurements. The photocarrier lifetime increases with the annealing temperature from 1 ps for as-implanted a-Si to 11 ps for a-Si annealed at 500 °C. The lifetime in annealed a-Si can be returned to the as-implanted level by ion irradiation. These observations indicate that a-Si can accommodate a variable number of defect-related trapping and recombination centers. The saturated defect density in as-implanted a-Si is estimated to be ≈1.6 at. %. Comparison with Raman spectroscopy suggests that various kinds of structural defects are present in a-Si.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.107212

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