Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 1776-1778
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Process conditions for fabricating ridge geometry AlxGa1−xAs-GaAs quantum well heterostructure laser arrays utilizing a high quality self-aligned native oxide of AlxGa1−xAs are presented. Wet oxidation is performed, after etching ridges, via H2O vapor in a N2 or N2/H2(10%) carrier gas at 435–445 °C for 15–20 min. The formation of a uniform smooth oxide was found to be critically dependent on the crystal environment prior to the oxidation process. Characteristics of devices fabricated by this process are presented.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107184
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