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Optical and structural investigation of SiGe/Si quantum wells (1992)

Vescan, L. ; Hartmann, A. ; Schmidt, K. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 2183-2185

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: In this letter we report photoluminescence and structural results obtained on asymmetrically strained Si0.7Ge0.3/Si single and multiple quantum wells epitaxially grown by low pressure chemical vapor deposition. Well-resolved peaks were obtained which can be attributed to quantum well excitons and their transversal optical phonon replica. A good correlation between peak properties and structure results was found. From the photoluminescence peak energies a valence band offset of 0.27 eV and an effective hole mass of 0.25 were estimated.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.107073

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