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Room-temperature epitaxial growth of Ag(110)/GaAs(100) films (1992)

Nason, T. C. ; You, L. ; Lu, T.-M.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 174-176

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Thin Ag films were deposited in a partially ionized beam vacuum system on undoped GaAs(100) substrates at room temperature. The x-ray pole-figure technique was used to characterize the crystal orientation. The epitaxial relationship observed was Ag(110)/GaAs(100) with Ag[100]//GaAs[1¯10]. The epitaxy was achieved at a vacuum in the 10−6 Torr range with no in situ cleaning. The substrates were prepared only by a HF dip immediately prior to deposition.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.106983

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