ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
III-V semiconductors such as InAsSb, InSbBi, and InAsSbBi are useful materials for far-infrared applications. Their growth usually requires low temperatures. The standard Sb source, trimethylantimony (TMSb), decomposes very slowly at low temperatures. In this work, a new Sb source, tertiarybutyldimethylantimony (TBDMSb), is investigated for OMVPE growth of InSb. Good surface morphology InSb layers were obtained for growth temperatures from 450 to as low as 325 °C. The growth temperature can be lowered by more than 100 °C when TBDMSb replaces TMSb. The growth efficiency of InSb using trimethylindium (TMIn) and TBDMSb is on the order of 1×104 μm/mole. The high values of growth efficiency indicate that there is neglectible parasitic reaction between TMIn and TBDMSb. The results indicate that TBDMSb is an excellent replacement for TMSb and TIPSb in the growth of Sb-containing alloys.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108487
