ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report measurements of photoluminescence decay time in a reverse biased GaAs/AlGaAs graded index separate confined heterostructure single quantum well (GRINSCH-SQW) laser, as a function of bias voltage at temperatures of 20, 70, and 150 K. For certain bias voltages and temperatures, we observe extremely fast escape times of optically generated carriers. We propose a simple model based on photogenerated electron recombination in the quantum well, and escape via direct tunneling out of the lower bound electronic level, thermally assisted tunneling out of the upper weakly bound state, or thermionic emission over the barrier. We have performed a theoretical calculation of each of these processes and show that the data agrees well with the direct and thermally assisted tunneling times and that the thermionic emission term underestimates the times.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108160
