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Pulsed laser annealing of P-implanted diamond (1993)

Allen, M. G. ; Prawer, S. ; Jamieson, D. N. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 63 (1993), S. 2062-2064

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Diamond deeply implanted with 4 MeV P ions to a dose of 1×1015/cm2 is annealed by a focused pulsed laser that is selectively absorbed by the implanted damaged layer. Laser treatment with multiple pulses at ever increasing power leads to excellent regrowth as measured by channeling Rutherford backscattering spectroscopy, surface profilometry, and by optical transmission. The importance of the deep implantation and the potential of this method for doping diamond is demonstrated.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.110592

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