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Formation of high resistivity regions in p-type Al0.5In0.5P by ion implantation (1993)

Zolper, J. C. ; Schneider, R. P. ; Lott, J. A.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 63 (1993), S. 3161-3163

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Ion implantation has been applied to magnesium-doped Al0.5In0.5P to produce high resistivity regions for the first time. Hydrogen, oxygen, and argon ions were implanted at a base dose ranging from 5×1012 to 5×1014 cm−2 and annealed from 400 to 900 °C. Hydrogen did not appreciably compensate the In0.5Al0.5P layer while oxygen and argon produced sheet resistances up to 1×109 Ω/(D'Alembertian). After annealing at 800 °C, regions with high dose oxygen implants maintained a sheet resistance above 1×107 Ω/(D'Alembertian), while regions with high dose argon implants recovered most of the unimplanted conductivity.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.110235

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