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Low-voltage vertical-cavity transmission modulator for 1.06 μm (1993)

Fritz, I. J. ; Brennan, T. M. ; Hammons, B. E. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 63 (1993), S. 494-496

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We present results on the first all-semiconductor, vertical Fabry–Perot-cavity optical transmission modulator. This device combined mechanically stable strained and unstrained (In,Al,Ga)As multilayers to achieve operation at 1.06 μm. Transmission-mode operation allows the resonant wavelength of the cavity to be finely tuned by varying the angle of incidence, providing, for the first time, a means of compensating for small inaccuracies in growth parameters. Using the modulator in double-pass operation with a corner-cube retroreflector, we demonstrate a tunable reflectance modulator with a fractional modulation of 25% at 3-V bias, suitable for applications in free-space communication.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.109983

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