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Gigahertz switching behavior of polarization-bistable InGaAsP/InP lasers under high-frequency current modulation (1994)

Klehr, A. ; Müller, R ; Voss, M. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 64 (1994), S. 830-832

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The switching dynamics between TE- and TM-polarization states is studied in a strained ridge-waveguide InGaAsP/InP laser that exhibits TE/TM bistability. Using current modulation with frequencies between 50 and 500 MHz, three types of emission are distinguished. With increasing modulation amplitude, the laser runs through a region of TE emission, a range of stochastic switching between TE and TM modes, and a third region of regular polarization switching. The minimum modulation amplitude for regular switching rises strongly with frequency while the respective switching times decrease from about 700 ps at 50 MHz down to 250 ps around 500 MHz, corresponding to gigahertz mode switching.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.111028

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