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Activation energy for C94 and C54 TiSi2 formation measured during rapid thermal annealing (1994)

Colgan, E. G. ; Clevenger, L. A. ; Cabral, C.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 65 (1994), S. 2009-2011

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The activation energies Ea for C49 and C54 TiSi2 formation were determined using in situ resistance measurements during rapid thermal annealing. Ti films were evaporated on undoped polycrystalline Si (poly-Si) and single-crystal Si on sapphire (SOS) substrates. The resistance was monitored for heating rates from 1 to 95 °C/s up to 1000 °C. The Ea's determined from Kissinger plots were 1.86±0.23 and 1.65±0.31 eV for C49 TiSi2 formation and 3.30±0.16 and 3.67±0.13 eV for C54 TiSi2 formation for Ti/poly-Si and Ti/SOS samples, respectively. These are the first reported measurements of Ea's for C49 and C54 TiSi2 formation at such high heating rates. The formation sequence remained the same for the range of heating rates examined. © 1994 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.112846

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