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Ag-induced multistep formation on Si(001) (1995)

Fölsch, S. ; Winau, D. ; Meyer, G. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 2185-2187

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The step topography of 4°-misoriented Si(001) surfaces was examined by scanning tunneling microscopy and spot profile analyzing–low-energy electron diffraction. The clean Si(001)-(2×1) surface proves to be a single domain substrate, which is characterized by a regular array of double steps. This step structure is changed dramatically upon adsorption of submonolayer quantities of Ag at ∼700 K. In this case, the formation of multisteps with fourfold, sixfold, and eightfold step heights occurs. The single domain character of the substrate is preserved, now showing a Ag-induced (3×2) reconstruction. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.115097

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