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Optimization of p-contacts on ZnSe diodes (1997)

Nürnberger, J. ; Faschinger, W. ; Schmitt, R. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 70 (1997), S. 1281-1283

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We show that a drastic improvement of the current voltage characteristics of a ZnSe diode can be achieved by lowering the growth temperature of a ZnSe/ZnTe multi-quantum well p contact. A similar trend is observed when the thickness of the ZnTe cap layer on top of the multi-quantum well is reduced. Both observations show that the suppression of interdiffusion plays a dominant role in the formation of Ohmic contacts to p-ZnSe. A comparison between a conventional diode and a diode where the p-ZnSe has been replaced by p-ZnSTe shows that the interdiffusion process affects the ZnSe underneath the contact, and not the multi-quantum well contact itself. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.119075

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