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Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy (1997)

Van Hove, J. M. ; Hickman, R. ; Klaassen, J. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 70 (1997), S. 2282-2284

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: GaN p–i–n photovoltaic diode arrays were fabricated from epitaxial films deposited on sapphire by molecular beam epitaxy. Peak UV responsivity was 0.11 A/W at 360 nm, corresponding to 48% internal quantum efficiency. Visible rejection over 400–800 nm was 3–4 orders of magnitude. Typical pulsed time response was measured at 8.2 μs. Spectral response modeling was performed to analyze the photocurrent contributions from photogenerated carrier drift in the depletion region and from minority carrier diffusion in the p and n layers. With the model, a maximum internal quantum efficiency of 55% at 360 nm was calculated for the photovoltaic diode structure. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.118838

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