Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 1089-1091
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The ultrafast relaxation dynamics of hot electrons, initially photoexcited with an excess energy of 300 meV, are monitored in a high-quality ZnSe epilayer grown on a GaAs substrate by exploiting the intrinsic interferrometric asymmetric Fabry–Perot sample structure. The results are consistent with the expected characteristic electronic LO-phonon emission time of 40–50 fs and provide evidence for the influence of the "hot phonon effect"(or "LO-phonon bottleneck") on the electron cooling dynamics at carrier densities above ∼3×1017 cm−3. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119736
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