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Intra- versus intergranular low-field magnetoresistance of Sr2FeMoO6 thin films (1999)

Yin, H. Q. ; Zhou, J.-S. ; Zhou, J.-P. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 75 (1999), S. 2812-2814

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Thin films of (001)-oriented Sr2FeMoO6 have been epitaxially deposited on LaAlO3 and SrTiO3 (001) substrates. Comparison of their transport and magnetic properties with those of polycrystalline ceramic samples shows a metallic versus semiconductor temperature dependence and a saturation magnetization Ms at 10 K of 3.2 μB/f.u. in the film as against 3.0 for a tetragonal polycrystalline sample. However, the Curie temperature TC(approximate)389 K is reduced from 415 K found for the tetragonal ceramic, which lowers Ms at 300 K in the thin films to 2.0 μB/f.u. compared to 2.2 μB/f.u. in the ceramics. A Wheatstone bridge arrangement straddling a bicrystal boundary has been used to verify that spin-dependent electron transfer through a grain boundary is responsible for the low-field magnetoresistance found in polycrystalline samples below TC. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.125158

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