ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Data are presented on the room-temperature, photopumped, continuous laser operation of multiple-well InGaP–GaAs quantum-well heterostructures and superlattices grown by low-pressure metalorganic chemical vapor deposition. Continuous laser operation at room temperature indicates high material quality and minimal nonradiative recombination at the heterointerfaces. The lasing wavelength near the GaAs band gap is consistent with weak bandfilling, and small quantum confinement of electrons and large confinement of holes (mh〉me, ΔEv〉ΔEc). Double-crystal x-ray diffraction and transmission electron microscopy data confirm the high material quality and heterointerface abruptness. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124948